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2 article(s) from Portavoce, Alain

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

Jacques Perrin Toinin,
Alain Portavoce,
Khalid Hoummada,
Michaël Texier,
Maxime Bertoglio,
Sandrine Bernardini,
Marco Abbarchi and
Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

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Figure 1: SRIM calculations of the implant distribution of Te (red) and Se (blue) atoms in Ge. The distributi...

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Figure 2: SEM plan-view images of the as-implanted Se sample: (1) low resolution view showing the different t...

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Figure 3: Thermal annealing effects on the co-implanted Se/Te sample: (1) as-implanted, (2) TB = 4.1 µm; (3) ...

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Figure 4: (1) and (2) TEM cross-sectional view of the Se-implanted sample after annealing with TB = 3.1 µm. (...

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Figure 5: SEM plan-view image obtained after annealing a 340 nm thick Ge layer sputtered on the native Si oxi...

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Full Research Paper

Published 30 Jan 2015

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Si/Ge intermixing during Ge Stranski–Krastanov growth

Alain Portavoce,
Khalid Hoummada,
Antoine Ronda,
Dominique Mangelinck and
Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

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Figure 1: SEM images acquired during APT sample preparation in a dual-beam FIB process. The image sequence (a...

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Figure 2: Sketch of the sample structure and AFM measurements performed on the sample surface after MBE growt...

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Figure 3: APT volume (100 × 100 × 90 nm³) obtained from the sample. Green, gray, red and blue dots correspond...

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Figure 4: Top-down, 1D Ge concentration profiles measured between the islands in two different samples. The p...

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Figure 5: Cross-sectional TEM image of a typical dome island (a), and side-views of two different APT volumes...

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Figure 6: APT volume showing 2% of the Ni atoms, 5% of the Ge atoms, and 100% of the O atoms (the Si atoms ar...

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Figure 7: Top-down 1D Ge concentration profiles measured in two different APT volumes, one in the direction p...

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Figure 8: APT analysis: (a) 3D volume (120 × 120 × 100 nm³), (b) 2D map of the Ge concentration distribution ...

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Figure 9: (a) APT volume (90 × 90 × 130 nm³) and (b) Si and Ge 1D concentration profiles measured in (a). Figure 9c in...

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Figure 10: (a) APT volume (70 × 70 × 85 nm³) and (b) Si and Ge 1D concentration profiles measured in this volu...

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Figure 11: APT measurements obtained for four APT volumes (green and red surfaces) which form almost half of a...

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Full Research Paper

Published 09 Dec 2014

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